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      Brand new A68064 Electronics Component Field effect transistor FET N-channel ditch MOS transistor

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      Shenzhen Mingshunxin Electronics Co., LimitdMultispecialty supplier14 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      A68064

      Type
      transistors

      Brand Name
      Original

      Package Type
      Throught Hole

      Other attributes

      Mounting Type
      standard

      Description
      Field effect transistor

      Place of Origin
      Original

      Package / Case
      TO-220

      Type
      Field effect transistor

      Operating Temperature
      -40 to 85 ° C

      Series
      Field effect transistor

      D/C
      NEW

      Application
      standard

      Brand
      transistor

      Voltage - Collector Emitter Breakdown (Max)
      standard

      Vce Saturation (Max) @ Ib, Ic
      standard

      Current - Collector Cutoff (Max)
      standard

      DC Current Gain (hFE) (Min) @ Ic, Vce
      standard

      Power - Max
      standard

      Frequency - Transition
      standard

      Operating Temperature
      standard

      Mounting Type
      Through Hole

      Resistor - Base (R1)
      standard

      Resistor - Emitter Base (R2)
      standard

      FET Type
      standard

      FET Feature
      Standard

      Drain to Source Voltage (Vdss)
      standard

      Current - Continuous Drain (Id) @ 25°C
      standard

      Gate Charge (Qg) (Max) @ Vgs
      standard

      Input Capacitance (Ciss) (Max) @ Vds
      standard

      Frequency
      standard

      Current Rating (Amps)
      standard

      Noise Figure
      standard

      Power - Output
      standard

      Voltage - Rated
      standard

      Drive Voltage (Max Rds On, Min Rds On)
      standard

      Vgs (Max)
      standard

      IGBT Type
      standard

      Vce(on) (Max) @ Vge, Ic
      standard

      Input Capacitance (Cies) @ Vce
      standard

      Input
      standard

      NTC Thermistor
      standard

      Voltage - Breakdown (V(BR)GSS)
      standard

      Current - Drain (Idss) @ Vds (Vgs=0)
      standard

      Current Drain (Id) - Max
      standard

      Voltage - Cutoff (VGS off) @ Id
      standard

      Resistance - RDS(On)
      standard

      Voltage
      standard

      Voltage - Output
      standard

      Voltage - Offset (Vt)
      standard

      Current - Gate to Anode Leakage (Igao)
      standard

      Current - Valley (Iv)
      standard

      Current - Peak
      standard

      Applications
      standard

      Transistor Type
      Transistor MOSFET

      more details
      FET

      Packaging and delivery

      Packaging Details
      Tube

      Supply Ability

      Supply Ability
      5000 Piece/Pieces per Day

      Show more

      Lead time

      Quantity (pieces)1 - 1000 > 1000
      Lead time (days)1To be negotiated

      Customization

      Customized packaging
      Min. order: 1000
      For more customization details, message supplier

      Know your supplier

      Shenzhen Mingshunxin Electronics Co., Limitd
      Multispecialty supplier14 yrsLocated in CN
      Registered trademarks (5)
      Quality control
      View more productsView profile

      Product descriptions from the supplier

      5 - 999 pieces
      $4.00
      >= 1000 pieces
      $3.80

      Variations

      Total options:
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